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Patents

[1]     Jiannong Wang, Xi Tang, Baikui Li; Metal-Heterostructure-Metal (MHM) Ultraviolet Photodetectors, US provisional.

[2]    Baikui Li, Xi Tang; Oto-electronic memory devices based on AlGaN/GaN heterostructures, (Chinese Patent App No. PCT/CN2018/082582)

[3]     Kevin J. Chen, Baikui Li, Xi Tang; P-Doping-Free Schottky-on-Heterojunction Light-Emitting Diode and High-Electron-Mobility Light-Emitting Transistor (Publication Number: WO 2015/131846 A1)

[4]     Kevin J. Chen, Baikui Li, Xi Tang; Transistors having On-chip Integrated Photon Source or Photonic-Ohmic Drain to Facilitate De-Trapping Electrons Trapped in Deep Traps of Transistors  (US 10,270,436)

 

 

Journal articles

 

(first author# or corresponding author*):

[1]      X. Tang#*, F. Ji, H. Wang, Z. Jin, H. Li, B. Li* and Jiannong Wang*, Temperature Enhanced Responsivity and Speed in an AlGaN/GaN Metal-Heterostructure-Metal Photodetector, Applied Physics Letters, 119, 013503, 2021.

[2]      H. Wang#, Y. Liu#, F. Ji, H. Li, B. Li* and X. Tang*, Investigation of the threshold voltage instability in normally-off p-GaN/AlGaN/GaN HEMTs by optical analysis, Japanese Journal of Applied Physics, 2021. https://doi.org/10.35848/1347-4065/ac1dea.

[3]      X. Tang#, R. Qiu#, Y. Liu, and B. Li*. Thermally Enhanced Hole Injection and Breakdown in a Schottky-Metal/ p -GaN/AlGaN/GaN Device under Forward Bias, Applied Physics Letters, 117, no. 4, 043501, 2020.

[4]      B. Li#, J. Wang, and X. Tang*,  Impact of Hole Injection on Static and Dynamic Behaviors in p-GaN gate AlGaN/GaN HEMTs,  IEEE Electron Device Lett.. vol. 40, no. 9, pp. 1389-1392, 2019.

[5]       B. Li#, X. Tang*, H. Li, H. Moghadam, Z. Zhang, J. Han, N. T. Nguyen, S. Dimitrijev, J. Wang,  Impact of Carrier Injections on the Threshold Voltage in p-GaN Gate AlGaN/GaN Power HEMTs,  Applied Physics Express, 12, May. 2019. doi.org/10.7567/1882-0786/ab1b19.

[6]       X. Tang#, B. Li*, H. A. Moghdam, P. Tanner, J. Han, H. Li, S. Dimitrijev, and J. Wang,  Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias,  Japanese Journal of Applied Physics, 57, 124101,2018. DOI: 10.7567/JJAP.57.124101.

[7]      X. Tang#, B. Li*, H. A. Moghadam, P. Tanner, J. Han, S. Dimitrijev,  Effect of hole-injection on leakage degradation in a p-GaN gate AlGaN/GaN power transistor,  IEEE Electron Device Lett., vol. 39, no. 8, pp. 1203-1206, Aug. 2018.

[8]      X. Tang#, B. Li*, H. A. Moghadam, P. Tanner, J. Han, S. Dimitrijev,  Mechanism of Threshold Voltage Shift in p -GaN Gate AlGaN/GaN Transistors,  IEEE Electron Device Lett. vol. 39, no. 8, pp. 1145-1148, Aug. 2018. DOI: 10.1109/LED.2018.2847669.

[9]       X. Tang#, Z. Zhang, J. Wei, B. Li, J. Wang, and K. J. Chen*,  Photon emission and current-collapse suppression of AlGaN/GaN field-effect transistors with photonic-ohmic drain at high temperatures,  Applied Physics Express, 11, 071003, Jun, 2018. DOI: 10.7567/APEX.11.071003.

[10]    X. Tang#, B. Li, K. J. Chen, and J. Wang*,  Photocurrent characteristics of metal-AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation,  Applied Physics Express, 11, 054101, April, 2018. DOI: 10.7567/APEX.11.054101.

[11]     B. Li#, X. Tang*, and G. Tang, J. Wei, J. Wang, and K. J. Chen*,  Switching Behaviors of On-chip Photon Source in AlGaN/GaN-on-Si Power HEMTs Platform,  IEEE Photonics Technology Lett., vol. 28, no. 24, pp. 2803-2806, Oct. 2016. DOI: 10.1109/LPT.2016.2623330.

[12]     X. Tang#, B. Li, Z. Zhang, G. Tang, J. Wei, and K. J. Chen*,  Characterization of Static and Dynamic Behavior in AlGaN/GaN-on-Si Power Transistors with Photonic-Ohmic Drain,  IEEE Trans. Electron Devices, vol. 63, no. 7, pp. 2831-2837, July 2016. DOI: 10.1109/TED.2016.2567442.

[13]     X. Tang#, B. Li, Y. Lu, and K. J. Chen*,  On-chip addressable Schottky-on-heterojunction light-emitting diode arrays on AlGaN/GaN-on-Si platform,  Phys. Status Solidi C. vol. 13, no. 5-6, pp. 365-368, May. 2016. DOI: 10.1002/pssc.201510169.

[14]     B. Li#, X. Tang#, J. Wang, and K. J. Chen*,  Optoelectronic devices on AlGaN/GaN HEMT platform,  (Invited, feature article) Phys. Status Solidi A., vol. 213, no. 5, pp. 1213-1221, May. 2016. DOI: 10.1002/pssa.201532782.

[15]     B. Li#, X. Tang#, and K. J. Chen*,  Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode,  Appl. Phys. Lett., vol. 106, no. 9, p. 093505, Mar. 2015. DOI: 10.1063/1.4914455.

 

(Co-authored):

 

[1]      Z. Zhang, X. Tang, B. Li, Strain-tunable III-Nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation, 04-20-2020, APL Materials, vol.8, issue 4, 2020.

[2]      Q. Zhou, H. Wu, H. Li, X. Tang, Z. Qin, D. Dong, Y. Lin, C. Lu, R. Qiu, R. Zheng, J. Wang, and B. Li,  Barrier inhomogeneity of Ni/AlN Schottky diode, IEEE Journal of the Electron Devices Society , vol. 7, p. 662, 17 June 2019.

[3]      W. Jin, M. Zhang, B. Li, X. Tang, and K. J. Chen,  An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT , IEEE Trans. Electron Devices, vol. 65, no. 7, pp. 2757, Jul.. 2018. DOI: 10.1109/TED.2018.2831246.

[4]     W. Jin, J. Lei, X. Tang, Baikui Li, Shenghou Liu, and K. J. Chen,  Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT , IEEE Electron Device Lett., vol. 39, no. 1, pp. 59-62, Nov. 2017. DOI: 10.1109/LED.2017.2771354.

[5]     Z. Zhang, B. Li, Q. Qian, X. Tang, M. Hua, B. Huang, and Kevin J. Chen, Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy, IEEE Trans. Electron Devices, vol. 64, no. 10, pp. 4036-4043, Oct. 2017. DOI: 10.1109/TED.2017.2733547.

[6]     G. Tang, J. Wei, Z. Zhang, X. Tang, M. Hua, H. Wang, and K. J. Chen,  Dynamic RON of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination,  IEEE Electron Device Lett., vol. 38, no. 7, pp. 937-940, Jul. 2017. DOI: 10.1109/LED.2017.2707529.

[7]       J. Wei, S. Liu, B. Li, X. Tang, Z. Zhang, G. Tang, C. Liu, Y. Lu, M. Hua, and K. J. Chen,  Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor,  IEEE Electron Device Lett., vol. 36, no. 12, pp. 1287-1290, Dec. 2015. DOI: 10.1109/LED.2015.2489228.

[8]       Y. Lu, B. Li, X. Tang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen,  Normally OFF Al2O3-AlGaN/GaN MIS-HEMTs with transparent gate electrode for gate degradation investigation,  IEEE Trans. Electron Devices, vol. 62, no. 3, pp. 821-827, Mar. 2015. DOI: 10.1109/TED.2015.2388735.

[9]       B. Li, X. Tang, J. Wang, and K. J. Chen,  P-doping-free III-nitride high electron mobility light-emitting diodes and transistors,  Appl. Phys. Lett., vol. 105, no. 3, p. 032105, Jul. 2014. DOI: 10.1063/1.4890238.

[10]     Z. Tang, S. Huang, X. Tang, B. Li, and K. J. Chen, Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs, IEEE Trans. Electron Devices, vol. 61, no. 8, pp. 2785-2792, Aug. 2014. DOI: 10.1109/TED.2014.2333063.

[11]     Z. Tang, Q. Jiang, Y. Lu, S. Huang, S. Yang, X. Tang, and K. J. Chen,  600-V normally off SiNx/AlGaN/GaN MIS-HEMT with large gate swing and low current collapse,  IEEE Electron Device Lett., vol. 34, no. 11, pp. 1373-1375, Nov. 2013. DOI: 10.1109/LED.2013.2279846.

 

Conference articles

 

(Presentation author#):

[1]        X. Tang#, B. Li, J. Zhang, H. Li, J. Han, N. T. Nguyen, S. Dimitrijev, and J. Wang,  Demonstration of Electron/Hole Injections in the Gate of p-GaN/AlGaN/GaN Power Transistors and Their Effect on Device Dynamic Performance, (poster) presented at the 2019 IEEE 31th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, May 2019.

[2]     X. Tang#, B. Li, N. T. Nguyen, S. Dimitrijev, and J. Wang,  Electron/hole injections in p-GaN/AlGaN/GaN HEMTs under forward gate bias and their effects on device behaviors, (poster) presented at the 13th International Conference on Nitride Semiconductors (ICNS), Bellevue, WA, USA, Jul. 2019.

[3]     X. Tang#, Q. Zhou, R. Qiu, R. Zheng, B. Li, K. J. Chen, J. Wang, Opto-electrical memory devices realized on AlGaN/GaN heterostructure platform,  (poster) presented at the 2018 International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa, Japan, Nov. 2018.

[4]      X. Tang#, H. Moghadam, P. Tanner, J. Han, R. Zheng, B. Li, and S. Dimitrijev, Leakage current increase in p-GaN gate AlGaN/GaN power devices by ON-state gate bias,  (poster) presented at the 2018 International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa, Japan, Nov. 2018.

[5]       X. Tang#, B. Li, H. Wang, J. Wei, G. Tang, Z. Zhang, and K. J. Chen,  Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of GaN-on-Si Heterojunction Power Transistors, (oral) presented at the 2016 IEEE 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, Czech Republic, Jun. 2016.

[6]       X. Tang#, B. Li, Y. Lu, H. Wang, C. Liu, J. Wei, and K. J. Chen, III-nitride transistors with photonic-ohmic drain for enhanced dynamic performances, (oral) presented at the 2015 International Electron Devices Meeting (IEDM), Washington, D.C., USA, Dec. 2015. DOI: 10.1109/IEDM.2015.7409832.

[7]       X. Tang#, Q. Jiang, H. Wang, B. Li, and K. J. Chen,  Suppressed Substrate-Coupled Cross-Talk under AC High-Voltage Switching on the AlGaN/GaN-on-Si Smart Power IC Platform,  (poster) presented at the 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug. 2015.

[8]       X. Tang#, B. Li, Y. Lu, and K. J. Chen,  On-chip addressable Schottky-on-heterojunction light-emitting diode arrays on AlGaN/GaN-on-Si platform,  (poster) presented at the 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug. 2015.

[9]       X. Tang#, B. Li, and K. J. Chen,  Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs Using Schottky-on-Heterojunction Light-Emitting Devices,  (oral) presented at the 42th Int. Symp. Nitride Semiconductors (ISCS), Santa Barbara, CA, USA, Jun. 2015.

[10]     X. Tang#, B. Li, and K. J. Chen, On-chip optical pumping of deep traps in AlGaN/GaN-on-Si power HEMTs, (poster) presented at the 2015 IEEE 27th International Symposium on Power Semiconductor Devices IC's (ISPSD), Kowloon, Hong Kong, China, May. 2015. DOI: 10.1109/ISPSD.2015.7123424.

 

 

 

(Co-authored):

 

[11]     Q. Zhou, B. Li, H. Wu, H. Li, X. Tang, R. Zheng, J. Wang,  Schottky Barrier Diode on m-plane AlN Crystal,  presented at the 13th International Conference on Nitride Semiconductors (ICNS), Bellevue, WA, USA, Jul. 2019.

[12]   G. Tang, J. Wei, Z. Zhang, X. Tang, M. Hua, H. Wang, and K. J. Chen, Impact of Substrate Termination on Dynamic Performance of GaN-on-Si Lateral Power Devices, in 2018 IEEE 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sapporo, Japan, May. 2018. DOI: 10.23919/ISPSD.2017.7988920.

[13]     Z. Zhang, B. Li, X. Tang, Q. Qian, M. Hua, B. Huang, and K. J. Chen,  Nitridation of GaN Surface for Power Device Application: A First-Principles Study,  in 2016 IEEE Int. Electron Devices Meet. (IEDM), San Francisco, CA, Dec. 2016.

[14]     B. Li, X. Tang, J. Wang, and Kevin J. Chen,  Enhancing dynamic performance of GaN-on-Si power devices with on-chip photon pumping , in 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 2016.

[15]     J. Wei, S. Liu, B. Li, X. Tang, Z. Zhang, G. Tang, C. Liu, Y. Lu, M. Hua, and K. J. Chen, Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess,  in 2015 IEEE Int. Electron Devices Meet. (IEDM), Washington, D.C., Dec. 2015. DOI: 10.1109/IEDM.2015.7409662.

[16]     B. Li, X. Tang, Q. Jiang, H. Wang, Y. Lu, J. Wang, and K. J. Chen,  Schottky-on-heterojunction optoelectronic functional devices realized on AlGaN/GaN-on-Si platform,  in 2014 IEEE Int. Electron Devices Meet. (IEDM), San Francisco, CA, Dec. 2014. DOI: 10.1109/IEDM.2014.7047032.

[17]     Z. Tang, Q. Jiang, S. Huang, Y. Lu, S. Yang, C. Liu, X. Tang, S. Liu, B. Li, and K. J. Chen,  Monolithically integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies,  in 2013 IEEE Int. Electron Devices Meet. (IEDM), Washington, D.C., Dec. 2013. DOI: 10.1109/IEDM.2013.6724574.