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Research Interests

Wide-bandgap power device technology:

device physics, design, process technology, characterization, and reliability test

III-nitride optoelectronic device technology

1. UV-light source based on AlGaN/GaN heterostructure

2. High-speed UV detectors

Material Growth and Property Characterizations

1. A theoretical study based on first-principle calculations

Research Grants

Funding agency	Participant Type	Amount (CNY)	Years	Project Title
BICI/Hong Kong Technology Transfer Center	PI (2/3)	800,000	2021-23	Metal-Heterostructure-Metal Photodetectors and All-GaN Integrated UV Sensing and Amplifying Integrated Circuits
Anhui Innovation Project for Returned Overseas	CI	50,000	2021-23	Development on the method to improve the reliability of GaN HEMTs
National Natural Science Foundation of China	PI (2/3)	550,000	2021-24	Device Technology for Next Generation p-GaN gate HEMTs with High Gate Reliability and Stability
Anhui University High-level Research Funding	CI	500,000	2020-24	Development of Advanced Power Electronics
China Postdoctoral Science Foundation	CI	400,000	2018-20	High Performance Power Diodes Based on AlN Single Crystal
Shenzhen Science and Technology Innovation Commission	PI (2/5)	2,500,000	2017-21	Investigation on Single Photon Emission Based on AlGaN/GaN Heterostructures
Shenzhen Science and Technology Innovation Commission	PI (2/2)	500,000	2017-19	Development of Power Devices Based on AlN/AlO heterostructure