Research
interests in wide-bandgap power device and optoelectronic device technology. Dr. Tang received his B.S. degree in Department of Physics, Nanjing
University in 2011 and M.ENG degree in Department of Electrical and Computer
Engineering, Cornell University in 2012. Dr. Xi Tang obtained his Ph.D.
degree in Electronic and Computer Engineering at the Hong Kong University of
Science and Technology (HKUST) in 2017 under the supervision of Prof. Kevin J.
Chen, who is the IEEE fellow, with his doctoral research on Gallium Nitride (GaN) power device technology. In
particular, he developed a GaN power
transistor with photonic-ohmic drain to achieve superior dynamic
performance. From 2017 to 2018, Dr. Tang was at Queensland Micro and Nanotechnology
Centre (QMNC) of Griffith University, engaging in the research and
development on the wide-bandgap device
technology with Prof. Sima
Dimitrijev. Dr. Tang received the National Introducing Project
Research Award in 2018 and conducted joint-research project with Dr. Baikui
Li at Shenzhen University on the development of AlN based high-voltage devices.
In 2018, he was a research associate of HKUST in a
collaboration with the research group headed by Prof.
Jiannong Wang, where his main research interest was III-nitride
optoelectronic device technology. In particular, he developed a GaN-heterostructure-based
ultraviolet photodetector for high temperature and high speed
applications. Dr. Tang joined Anhui University in 2020. He is currently a Tenure-track
Professor at the Institute of
Physical Science and Information Technology and with a research
group consisting of 3 faculty members and 7 postgraduate students.
Database Advanced Semiconductor Materials and Devices Research Laboratory (ASMD lab) |